Kinetic Magnetism at the Interface Between Mott and Band Insulators

Abstract

We show that the interplay of a high density two-dimensional electron gas and localized electrons in a neighboring Mott insulator leads to kinetic magnetism unique to the Mott/band insulator interface. Our study is based upon a bilayer Hubbard model at $U=\infty$ with a potential difference between the two layers. We combine analytic results with DMRG simulations to show that magnetism, and especially ferromagnetism, is greatly enhanced relative by the proximity of the two subsystems. The results are potentially relevant to recent experiments suggesting magnetism in $R$TiO${}_3$/SrTiO${}_3$ heterostructures.

5 pages, 4 figures + Supplementary Information

References in corpus (5)

• High Mobility in LaAlO3/SrTiO3 Heterostructures: Origin, Dimensionality and Perspectives
• Origin of charge density at LaAlO3-on-SrTiO3 hetero-interfaces; possibility of intrinsic doping
• Carrier-controlled ferromagnetism in SrTiO3
• Dimer Mott Insulator in an Oxide Heterostructure
• Tuning Kinetic Magnetism of Strongly Correlated Electrons via Staggered Flux

Cited by in corpus (4)

• Exact Results on Itinerant Ferromagnetism and the 15-puzzle Problem
• Evolution of Nagaoka phase with kinetic energy frustrating hoppings
• Disorder versus two transport lifetimes in a strongly correlated electron liquid
• Bound States at Semiconductor -- Mott Insulator Interfaces