Bound States at Semiconductor -- Mott Insulator Interfaces

Abstract

Utilizing the hierarchy of correlations in the context of a Fermi-Hubbard model, we deduce the presence of quasi-particle bound states at the interface between a Mott insulator and a semiconductor, as well as within a semiconductor-Mott-semiconductor heterostructure forming a quantum well. In the case of the solitary interface, the existence of bound states necessitates the presence of an additional perturbation with a minimal strength depending on the spin background of the Mott insulator. Conversely, within the quantum well, this additional perturbation is still required to have bound states while standing-wave solutions even exist in its absence.

References in corpus (28)

• Lattice relaxation, electronic screening, and spin and orbital phase diagram of LaTiO${}_3$/SrTiO${}_3$ superlattices
• Polar Discontinuity Doping of the LaVO_3/SrTiO_3 Interface
• Origin of two-dimensional electron gases at oxide interfaces: insights from theory
• Spatial inhomogeneity and strong correlation physics: a dynamical mean field study of a model Mott-insulator/band-insulator heterostructure
• Strong-Coupling Perturbation Theory of the Hubbard Model
• The Hubbard model within the equations of motion approach
• Kondo proximity effect: How does a metal penetrate into a Mott insulator?
• Mott Transition in a Valence Bond Solid Insulator with a Triangular Lattice
• Emergence of coherence in the Mott--superfluid quench of the Bose-Hubbard model
• Metal-Insulator Transition and Lattice Instability of Paramagnetic V2O3
• The Mott insulator LaTiO_3 in heterostructures with SrTiO_3 is metallic
• Equilibration and prethermalization in the Bose-Hubbard and Fermi-Hubbard models
• Strong-coupling perturbation theory for the extended Bose-Hubbard model
• Anions effects on the electronic structure and electrodynamic properties of the Mott insulator $\kappa$-(BEDT-TTF)${}_2$Ag${}_2$(CN)${}_3$
• Nonequilibrium transport and optical properties of model metal--Mott-insulator--metal heterostructures
• Propagation of quantum correlations after a quench in the Mott-insulator regime of the Bose-Hubbard model
• DFT+DMFT calculations of the complex band and tunneling behavior for the transition metal monoxides MnO, FeO, CoO and NiO
• Doublon bottleneck in the ultrafast relaxation dynamics of hot electrons in 1T-TaS_2
• Boltzmann relaxation dynamics in the strongly interacting Fermi-Hubbard model
• Environment induced pre-thermalization in the Mott-Hubbard model
• Superconductivity at epitaxial LaTiO3-KTaO3 interfaces
• Density of States and Magnetic Correlations at a Metal-Mott Insulator Interface
• Boltzmann relaxation dynamics of strongly interacting spinless fermions on a lattice
• Hierarchy of double-time correlations
• Back-reaction and correlation effects on pre-thermalization in Mott-Hubbard systems
• Kinetic Magnetism at the Interface Between Mott and Band Insulators
• Hard X-ray photoemission spectroscopy of LaVO${}_3$/SrTiO${}_3$: Band alignment and electronic reconstruction
• Quasi-particle propagation across semiconductor-Mott insulator interfaces