Nonequilibrium transport and optical properties of model metal--Mott-insulator--metal heterostructures

Abstract

Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function technique to account for the finite bias voltage between the leads. Current across the junction is computed as a function of bias voltage. Electron spectral functions in the interacting region are shown to evolve by an applied bias voltage. This effect is measurable by photoemission spectroscopy and scanning tunneling microscopy. Further predictions are made for the optical conductivity under a bias voltage as a possible tool to detect a deformed density of states. A general discussion of correlated-electron based heterostructures and future prospect is given.

11 pages, 11 figures, published version

References in corpus (4)

• Modulation Doping near Mott-Insulator Heterojunctions
• Metallic interface at the boundary between band and Mott insulators
• Decoupling method for dynamical mean field theory calculations
• Mechanism of Ambipolar Field-Effect Carrier Injections in One-Dimensional Mott Insulators

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• Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description
• Electronic and magnetic properties in strongly correlated heterostructures
• Resonance Effects in Correlated Multilayer Heterostructures
• Unexpected linear conductivity in Landau-Zener model: limitations and improvements of the relaxation time approximation in the quantum master equation
• Quasi-particle propagation across semiconductor-Mott insulator interfaces
• Roles of Potential Gradient and Electrode Bandwidth on Negative Differential Resistance in One-Dimensional Band Insulator
• Photodriven Mott insulating heterostructures: A steady-state study of impact ionization processes
• Bound States at Semiconductor -- Mott Insulator Interfaces
• Transmission through multiple Mott insulator - semiconductor wells