Nonequilibrium transport and optical properties of model metal--Mott-insulator--metal heterostructures

Abstract

Electronic properties of heterostructures in which a finite number of Mott-insulator layers are sandwiched by semi-infinite metallic leads are investigated by using the dynamical-mean-field method combined with the Keldysh Green's function technique to account for the finite bias voltage between the leads. Current across the junction is computed as a function of bias voltage. Electron spectral functions in the interacting region are shown to evolve by an applied bias voltage. This effect is measurable by photoemission spectroscopy and scanning tunneling microscopy. Further predictions are made for the optical conductivity under a bias voltage as a possible tool to detect a deformed density of states. A general discussion of correlated-electron based heterostructures and future prospect is given.

arXiv comment11 pages, 11 figures, published version

References in corpus (25)

• A continuous-time solver for quantum impurity models
• Hysteretic current-voltage characteristics and resistance switching at a rectifying Ti/Pr${}_{0.7}$Ca${}_{0.3}$MnO${}_3$ interface
• Nearly total spin polarization in La2/3Sr1/3MnO3 from tunneling experiments
• Continuous Time Quantum Monte Carlo method for fermions
• Field-Driven Hysteretic and Reversible Resistive Switch at the Ag-Pr0.7Ca0.3MnO3 Interface
• Nonequilibrium dynamical mean-field theory
• The Hubbard Model at Infinite Dimensions: Thermodynamic and Transport Properties
• Lattice relaxation, electronic screening, and spin and orbital phase diagram of LaTiO${}_3$/SrTiO${}_3$ superlattices
• A New Iterative Perturbation Scheme for Lattice Models with Arbitrary Filling
• Breakdown of a Mott insulator -- non-adiabatic tunneling mechanism
• Surface metal-insulator transition in the Hubbard model
• Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance
• Spatial inhomogeneity and strong correlation physics: a dynamical mean field study of a model Mott-insulator/band-insulator heterostructure
• Metallic surface of a Mott insulator - Mott insulating surface of a metal
• Perturbative Approach to the Nonequilibrium Kondo Effect in a Quantum Dot
• Theory of Mott insulator/band insulator heterostructure
• Dynamical mean field theory for strongly correlated inhomogeneous multilayered nanostructures
• Mott Transitions in the 2D Half-Filled Hubbard Model: Correlator Projection Method with Projective Dynamical Mean-Field Approximation
• Modulation Doping near Mott-Insulator Heterojunctions
• Metallic interface at the boundary between band and Mott insulators
• Interface ordering and phase competition in a model Mott-insulator--band-insulator heterostructure
• Tuning a Josephson junction through a quantum critical point
• Equation of motion approach to the Hubbard model in infinite dimensions
• Decoupling method for dynamical mean field theory calculations
• Mechanism of Ambipolar Field-Effect Carrier Injections in One-Dimensional Mott Insulators

Cited by in corpus (28)

• Nonequilibrium dynamical mean-field theory and its applications
• Ultrafast optical spectroscopy of strongly correlated materials and high-temperature superconductors: a non-equilibrium approach
• Nonequilibrium Dynamical Mean Field Theory: an auxiliary Quantum Master Equation approach
• Auxiliary master equation approach to non-equilibrium correlated impurities
• Engineered Mott ground state in LaTiO${}_{3+\delta }$/LaNiO${}_3$ heterostructure
• Non-equilibrium electronic transport in a one-dimensional Mott insulator
• Auxiliary master equation approach within matrix product states: Spectral properties of the nonequilibrium Anderson impurity model
• Field-induced metal-insulator transition and switching phenomenon in correlated insulators
• Electronic transport and dynamics in correlated heterostructures
• Non-equilibrium gap-collapse near a first-order Mott transition
• Transport Through a Correlated Interface: Auxiliary Master Equation Approach
• Crossover from bias-induced to field-induced breakdowns in one-dimensional band and Mott insulators attached to electrodes
• Current response of nonequilibrium steady states in Landau-Zener problem: Nonequilibrium Green's function approach
• Mott insulator breakdown through pattern formation
• Charge redistribution in correlated heterostuctures within nonequilibrium real-space dynamical mean-field theory
• Keldysh field theory of a driven dissipative Mott insulator: nonequilibrium response and phase transitions
• Electronic and magnetic properties in strongly correlated heterostructures
• Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description
• Resonance Effects in Correlated Multilayer Heterostructures
• An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach
• Unexpected linear conductivity in Landau-Zener model: limitations and improvements of the relaxation time approximation in the quantum master equation
• Electronic transport through correlated electron systems with nonhomogeneous charge orderings
• Thermoelectric properties of a strongly correlated layer
• Quasi-particle propagation across semiconductor-Mott insulator interfaces
• Roles of Potential Gradient and Electrode Bandwidth on Negative Differential Resistance in One-Dimensional Band Insulator
• Photodriven Mott insulating heterostructures: A steady-state study of impact ionization processes
• Bound States at Semiconductor -- Mott Insulator Interfaces
• Transmission through multiple Mott insulator - semiconductor wells