Mott insulator breakdown through pattern formation
arXiv:1412.8644 · doi:10.1103/PhysRevB.93.144305
Abstract
We study the breakdown of a Mott insulator with the thermodynamic imbalance induced by an applied bias voltage. By analyzing the instabilities of the magnetic susceptibility, we describe a rich non-equilibrium phase diagram, obtained for different applied voltages, that exhibits phases with a spatially patterned charge gap. For a finite voltage, smaller than the value of the equilibrium Mott gap, the formation of patterns coincides with the emergence of mid-gap states contributing to a finite steady-state conductance. We discuss the experimental implications of this new scenario of Mott breakdown.
5 pages + 4 pages of supplemental material, 3 figures
References in corpus (30)
- Many-Body Physics with Ultracold Gases
- Thermalization and its mechanism for generic isolated quantum systems
- Quantum States and Phases in Driven Open Quantum Systems with Cold Atoms
- Interaction Quench in the Hubbard model
- Dynamical phase transition in correlated fermionic lattice systems
- Dynamical Phase Transitions and Instabilities in Open Atomic Many-Body Systems
- Ultracold atoms out of equilibrium
- Diagrammatic Monte Carlo simulation of non-equilibrium systems
- Time-Dependent Mean Field Theory for Quench Dynamics in correlated electron systems
- Nonequilibrium quantum criticality in open electronic systems
- Real-time simulations of nonequilibrium transport in the single-impurity Anderson model
- Nonequilibrium Dynamical Mean Field Theory: an auxiliary Quantum Master Equation approach
- Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
- Bound states in ab initio approaches to quantum transport: A time-dependent formulation
- Non-equilibrium electronic transport in a one-dimensional Mott insulator
- Bold Line Diagrammatic Monte Carlo Method: General formulation and application to expansion around the Non-Crossing Approximation
- Diffusive high-temperature transport in the one-dimensional Hubbard model
- Electric Pulse Induced Resistive Switching, Electronic Phase Separation, and Possible Superconductivity in a Mott insulator
- Witnessing the formation and relaxation of massive quasi-particles in a strongly correlated electron system
- Electric-field-driven resistive switching in dissipative Hubbard model
- New theoretical approaches for correlated systems in nonequilibrium
- Field-induced metal-insulator transition and switching phenomenon in correlated insulators
- Transport properties of the one-dimensional Hubbard model at finite temperature
- Voltage quench dynamics of a Kondo system
- Non-Markovian effects in electronic and spin transport
- Nonequilibrium transport and optical properties of model metal--Mott-insulator--metal heterostructures
- Current driven quantum criticality in itinerant electron ferromagnets
- Quantum Criticality out of Equilibrium: Steady State in a Magnetic Single-Electron Transistor
- Electronic transport and dynamics in correlated heterostructures
- Current characteristics of a one-dimensional Hubbard chain: The role of correlation and dissipation
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- Charge redistribution in correlated heterostuctures within nonequilibrium real-space dynamical mean-field theory
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- Transient phases and dynamical transitions in the post quench evolution of the generalized Bose-Anderson model
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