Correlated Insulator Collapse due to Quantum Avalanche via In-Gap Ladder States
arXiv:2205.04396 · doi:10.1038/s41467-023-38557-8
Abstract
We propose a microscopic mechanism to resolve the long-standing puzzle of the insulator-to-metal transition in correlated electronic systems, most notably charge-density-wave (CDW) materials and Mott insulators, driven far-from-equilibrium by a DC electric field. By introducing a generic model of electrons coupled to an inelastic medium of phonons, we demonstrate that an electron avalanche can occur in the bulk limit of such insulators at arbitrarily small electric field. The quantum avalanche arises by the generation of a ladder of in-gap states, created by a multi-phonon emission process. Hot-phonons in the avalanche trigger a premature and partial collapse of the correlated gap. The details of the phonon spectrum dictate two-stage versus single-stage mechanisms which we associate with CDW and Mott resistive transitions, respectively. The electron and phonon temperatures, as well as the temperature dependence of the threshold fields, point to the quantum nature of this nonequilibrium phase transition.
References in corpus (25)
- Nonequilibrium dynamical mean-field theory and its applications
- Classification of Charge Density Waves Based on Their Nature
- Challenges in materials and devices for Resistive-Switching-based Neuromorphic Computing
- Breakdown of a Mott insulator -- non-adiabatic tunneling mechanism
- Universal electric-field-driven resistive transition in narrow-gap Mott insulators
- Resistive switching induced by electronic avalanche breakdown in GaTaSeTe narrow gap Mott Insulators
- Phonon-assisted resonant tunneling of electrons in graphene-boron nitride transistors
- Field-driven Mott gap collapse and resistive switch in correlated insulators
- Damping of Bloch oscillations in the Hubbard model
- Electric-field-driven resistive switching in dissipative Hubbard model
- Temperature and Voltage Driven Tunable Metal-Insulator Transition in Individual nanowires
- Field-induced metal-insulator transition and switching phenomenon in correlated insulators
- Dimensional Crossover Driven by an Electric Field
- Electrical Breakdown in a V2O3 device at the Insulator to Metal Transition
- Dimensional Crossover in a Charge Density Wave Material Probed by Angle-Resolved Photoemission Spectroscopy
- Nonequilibrium Mean-Field Theory of Resistive Phase Transitions
- Microscopic Theory of Resistive Switching in Ordered Insulators: Electronic vs. Thermal Mechanism
- Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films
- Energy dissipation in DC-field driven electron lattice coupled to fermion baths
- Crossover from bias-induced to field-induced breakdowns in one-dimensional band and Mott insulators attached to electrodes
- Role of a higher dimensional interaction in stabilizing charge density waves in quasi-1D NbSe revealed by angle-resolved photoemission spectroscopy
- Nonequilibrium Excitations and Transport of Dirac Electrons in Electric-Field-Driven Graphene
- Mott insulator breakdown through pattern formation
- Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description
- Spatial behavior in a Mott insulator near the voltage-driven resistive transition
Cited by in corpus (6)
- Electrically driven insulator-to-metal transition in a correlated insulator: Electronic mechanism and thermal description
- Lattice contraction induced by resistive switching in chromium-doped V2O3: a hallmark of Mott physics
- Impact of disorder and phonons on the Hubbard bands of Mott insulators in strong electric fields
- Mixed-configuration approximation for multiorbital systems out of equilibrium
- Electron transport in disordered insulating lattice under nonlinear electric field
- Nonequilibrium hysteretic phase transitions in periodically light-driven superconductors