Impact of disorder and phonons on the Hubbard bands of Mott insulators in strong electric fields

Abstract

We characterize the current-carrying non-equilibrium steady-state (NESS) in a single-band Hubbard model confronted with a static electric field in the presence of quenched disorder. Beyond linear response regime, the electric field amplitude must be such to compensate for at least half of the band gap in order to have a non-negligible stationary current. As disorder is not expected to dissipate the extra energy injected by the field, optical phonons assisted by a fermionic heat bath serve as dissipation channels for the current-induced Joule heat generated by the accelerated electrons. The NESS of the system is addressed by means of the dynamical mean-field theory using the so-called auxiliary master equation approach as impurity solver. Disorder effects are treated locally via the coherent potential approximation (CPA) and the self-consistent Born (SCB) approach. In the regime in which the two schemes yield similar results, we employ the SCB as it is computationally cheaper than the CPA. We show that, in a purely electronic setup, the disorder-induced dephasing cannot contribute states within the gap but only smear out the edges of the Hubbard bands. When phonons are taken into account, the different nature of disorder-induced dephasing and phonon-related dissipation becomes clear. We show that although both disorder and electron-phonon interaction enhance the current at off-resonant fields, disorder effects play a marginal role since they cannot provide in-gap states which are instead brought about by phonons and represent the privileged relaxation pathway for excited electrons.

18 pages, 20 figures

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Cited by in corpus (2)

• Photodriven Mott insulating heterostructures: A steady-state study of impact ionization processes
• Iterated Perturbation Theory for Mott Insulators in a Static Electric Field with Optical Phonons