Nonequilibrium thermal state of a voltage-biased Mott insulator

Abstract

We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we derive an effective Langevin equation for the `slow' magnetic variables. The coupling of electrons to these degrees of freedom determine the transport properties. At low temperature we find a voltage-driven discontinuous insulator-metal transition, along with hysteresis. We map the suppression of the Néel temperature $T_N$ and pseudogap temperature $T_{pg}$ with increasing voltage, and discover that the biased Mott insulator has a finite temperature insulator-metal transition. The low temperature results resolve an experimental puzzle about hysteresis, and the thermal results make testable predictions on spectra and nonlinear transport.

12 pages, 11 figures. Supplement 5 pages, 1 figure

References in corpus (9)

• The Fascinating World of Landau-Lifshitz-Gilbert Equation: An Overview
• Multiple Avalanches Across the Metal-Insulator Transition of Vanadium Oxide Nano-scaled Junctions
• Nonequilibrium Dynamical Mean Field Theory: an auxiliary Quantum Master Equation approach
• Electrically-driven phase transition in magnetite nanostructures
• Non-equilibrium electronic transport in a one-dimensional Mott insulator
• Ultrafast electron calorimetry uncovers a new long-lived metastable state in 1T-TaSe${}_2$ mediated by mode-selective electron-phonon coupling
• Electric-field-driven resistive switching in dissipative Hubbard model
• The origin of hysteresis in resistive switching in magnetite is Joule heating
• Testing the Monte Carlo - Mean Field approximation in the one-band Hubbard model

Cited by in corpus (1)

• Stochastic semiclassical theory for non-equilibrium electron-phonon coupled systems