Transmission through multiple Mott insulator - semiconductor wells

Abstract

Weakly and strongly interacting quantum many-body systems, namely semiconductors and Mott insulators, are combined into a layered heterostructure. Via the hierarchy of correlations, we derive and match the propagating quasi-particle solutions in the different regions and calculate the transmission coefficients through these layered structures. As a proof of principle, we find the well known transmission bands of a semiconductor heterostructure. Extending this idea to semiconductor and Mott insulator structures we calculate the transmittance and the resonance energies. Within a phase accumulation model we find analytical expressions for the scattering phase shift. Lastly, we find transmission curves with skewness for structures with applied voltage.

References in corpus (21)

• The Hubbard Model
• Lattice relaxation, electronic screening, and spin and orbital phase diagram of LaTiO${}_3$/SrTiO${}_3$ superlattices
• Quantum confinement of Mott electrons in ultrathin LaNiO3/LaAlO3 superlattice
• Spatial inhomogeneity and strong correlation physics: a dynamical mean field study of a model Mott-insulator/band-insulator heterostructure
• The Hubbard model within the equations of motion approach
• Mott Transition in a Valence Bond Solid Insulator with a Triangular Lattice
• Emergence of coherence in the Mott--superfluid quench of the Bose-Hubbard model
• Transmission eigenchannels and the densities of states of random media
• Metal-Insulator Transition and Lattice Instability of Paramagnetic V2O3
• Discovery of a Single-Band Mott Insulator in a van der Waals Flat-Band Compound
• Half metallic digital ferromagnetic heterostructure composed of a $\delta$-doped layer of Mn in Si
• The Mott insulator LaTiO_3 in heterostructures with SrTiO_3 is metallic
• Equilibration and prethermalization in the Bose-Hubbard and Fermi-Hubbard models
• Anions effects on the electronic structure and electrodynamic properties of the Mott insulator $\kappa$-(BEDT-TTF)${}_2$Ag${}_2$(CN)${}_3$
• Nonequilibrium transport and optical properties of model metal--Mott-insulator--metal heterostructures
• The Hubbard model beyond the two-pole approximation: a Composite Operator Method study
• Doublon bottleneck in the ultrafast relaxation dynamics of hot electrons in 1T-TaS_2
• Boltzmann relaxation dynamics in the strongly interacting Fermi-Hubbard model
• Emergence of high-temperature superconductivity at the interface of two Mott insulators
• Back-reaction and correlation effects on pre-thermalization in Mott-Hubbard systems
• Quasi-particle propagation across semiconductor-Mott insulator interfaces