Metal-Insulator Transition and Lattice Instability of Paramagnetic V2O3
arXiv:1410.5399 · doi:10.1103/PhysRevB.91.195115
Abstract
We determine the electronic structure and phase stability of paramagnetic VO at the Mott-Hubbard metal-insulator phase transition, by employing a combination of an ab initio method for calculating band structures with dynamical mean-field theory. The structural transformation associated with the metal-insulator transition is found to occur upon a slight expansion of the lattice volume by %, in agreement with experiment. Our results show that the structural change precedes the metal-insulator transition, implying a complex interplay between electronic and lattice degrees of freedom at the transition. Electronic correlations and full charge self-consistency are found to be crucial for a correct description of the properties of VO.
5 pages, 4 figures
References in corpus (18)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Continuous-time Monte Carlo methods for quantum impurity models
- Quantum Monte Carlo Impurity Solver for Cluster DMFT and Electronic Structure Calculations in Adjustable Base
- Dynamical Mean-Field Theory within an Augmented Plane-Wave Framework: Assessing Electronic Correlations in the Iron Pnictide LaFeAsO
- Plane-wave based electronic structure calculations for correlated materials using dynamical mean-field theory and projected local orbitals
- Self-consistency over the charge-density in dynamical mean-field theory: a linear muffin-tin implementation and some physical implications
- A Microscopic View on the Mott transition in Chromium-doped V2O3
- Enhanced Crystal Field Splitting and Orbital Selective Coherence by Strong Correlations in V_2O_3
- Construction and solution of a Wannier-functions based Hamiltonian in the pseudopotential plane-wave framework for strongly correlated materials
- Computing total energies in complex materials using charge self-consistent DFT+DMFT
- Quasiparticle evolution and pseudogap formation in V2O3: An infrared spectroscopy study
- Mott-Hubbard transition in V2O3 revisited
- Approaching finite-temperature phase diagrams of strongly correlated materials: a case study for V2O3
- Structural relaxation due to electronic correlations in the paramagnetic insulator KCuF3
- Photoemission study of (VM)O (M=Cr, Ti)
- Shining light on transition metal oxides: unveiling the hidden Fermi Liquid
- Multi-orbital Effects in Optical Properties of Vanadium Sesquioxide
- How chromium doping affects the correlated electronic structure of V2O3
Cited by in corpus (18)
- Magnetic Collapse and the Behavior of Transition Metal Oxides at High Pressure
- Dynamic electronic correlation effects in NbO as compared to VO
- Energy-weighted density matrix embedding of open correlated chemical fragments
- Emergence of quantum critical charge and spin-state fluctuations near the pressure-induced Mott transition in MnO, FeO, CoO, and NiO
- Fermi Surface of Metallic VO from Angle-Resolved Photoemission: Mid-level Filling of Bands
- Disentangling structural and electronic properties in VO thin films: a genuine non-symmetry breaking Mott transition
- Analytic continuation-free Green's function approach to correlated electronic structure calculations
- Transition from Pauli paramagnetism to Curie-Weiss behaviour in vanadium
- Charge disproportionation and site-selective local magnetic moments in the post-perovskite-type FeO under ultra-high pressures
- Metal-insulator transition and local-moment collapse in negative charge-transfer CaFeO under pressure
- Electronic correlations and long-range magnetic ordering in NiO tuned by pressure
- Orbital-selective coherence-incoherence crossover and metal-insulator transition in Cu-doped NaFeAs
- Electron correlation effects in paramagnetic cobalt
- Role of surface termination in the metal-insulator transition of VO(0001) ultrathin films
- Bound States at Semiconductor -- Mott Insulator Interfaces
- Coulomb correlations and magnetic properties of L1 FeCo: a DFT+DMFT study
- Relevance of long-range screening in Mott transition examined via a hydrogen lattice
- Transmission through multiple Mott insulator - semiconductor wells