Fermi Surface of Metallic V${}_2$O${}_3$ from Angle-Resolved Photoemission: Mid-level Filling of $e_g^{\pi }$ Bands

Abstract

Using angle resolved photoemission spectroscopy (ARPES) we report the first band dispersions and distinct features of the bulk Fermi surface (FS) in the paramagnetic metallic phase of the prototypical metal-insulator transition material V${}_2$O${}_3$. Along the $c$-axis we observe both an electron pocket and a triangular hole-like FS topology, showing that both V 3$d$ $a_{1g}$ and $e_g^{\pi }$ states contribute to the FS. These results challenge the existing correlation-enhanced crystal field splitting theoretical explanation for the transition mechanism and pave the way for the solution of this mystery.

5 pages, 4 figures plus supplement 12 pages, 3 figures, 1 table

References in corpus (7)

• A Microscopic View on the Mott transition in Chromium-doped V2O3
• Enhanced Crystal Field Splitting and Orbital Selective Coherence by Strong Correlations in V_2O_3
• Metal-Insulator Transition and Lattice Instability of Paramagnetic V2O3
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Cited by in corpus (6)

• Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators
• Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V${}_2$O${}_3$
• Disentangling structural and electronic properties in V${}_2$O${}_3$ thin films: a genuine non-symmetry breaking Mott transition
• Momentum-resolved electronic structures and strong electronic correlations in graphene-like nitride superconductors
• Electronic band structure of Ti2O3 thin films studied by angle-resolved photoemission spectroscopy
• Metal to insulator transition at the surface of $V_2{O}_3$ thin films: an in-situ view