Fermi Surface of Metallic V${}_2$O${}_3$ from Angle-Resolved Photoemission: Mid-level Filling of $e_g^{\pi }$ Bands

Abstract

Using angle resolved photoemission spectroscopy (ARPES) we report the first band dispersions and distinct features of the bulk Fermi surface (FS) in the paramagnetic metallic phase of the prototypical metal-insulator transition material V${}_2$O${}_3$. Along the $c$-axis we observe both an electron pocket and a triangular hole-like FS topology, showing that both V 3$d$ $a_{1g}$ and $e_g^{\pi }$ states contribute to the FS. These results challenge the existing correlation-enhanced crystal field splitting theoretical explanation for the transition mechanism and pave the way for the solution of this mystery.

arXiv comment5 pages, 4 figures plus supplement 12 pages, 3 figures, 1 table

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Cited by in corpus (9)

• Uncovering the mechanism of the impurity-selective Mott transition in paramagnetic V${}_2$O${}_3$
• Nanoscale self-organisation and metastable non-thermal metallicity in Mott insulators
• Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in V${}_2$O${}_3$
• Frustrated Magnetism in Mott Insulating (V${}_{1-x}$Cr${}_x$)${}_2$O${}_3$
• Momentum-resolved electronic structures and strong electronic correlations in graphene-like nitride superconductors
• Disentangling structural and electronic properties in V${}_2$O${}_3$ thin films: a genuine non-symmetry breaking Mott transition
• Realistic many-body approaches to materials with strong nonlocal correlations
• Electronic band structure of Ti2O3 thin films studied by angle-resolved photoemission spectroscopy
• Metal to insulator transition at the surface of $V_2{O}_3$ thin films: an in-situ view