Photoemission study of (VM)O (M=Cr, Ti)
arXiv:cond-mat/0608380 · doi:10.1103/PhysRevB.74.165101
Abstract
We present high-resolution bulk-sensitive photoemission spectra of (VM)O (M=Cr, Ti). The measurements were made for the paramagnetic metal (PM), paramagnetic insulator (PI), and antiferromagnetic insulator (AFI) phases of (VM)O with the samples of = 0, 0.012, and 0.028 for Cr-doping and = 0.01 for Ti-doping. In the PM phase, we observe a prominent quasiparticle peak in general agreement with theory, which combines dynamical mean-field theory with the local density approximation (LDA+DMFT). The quasiparticle peak shows a significantly larger peak width and weight than in the theory. For both the PI and AFI phases, the vanadium 3d parts of the valence spectra are not simple one peak structures. For the PI phase, there is not yet a good theoretical understanding of these structures. The size of the electron removal gap increases, and spectral weight accumulates in the energy range closer to the chemical potential, when the PI to AFI transition occurs. Spectra taken in the same phases with different compositions show interesting monotonic changes as the dopant concentration increases, regardless of the dopant species. With increased Cr-doping, the AFI phase gap decreases and the PI phase gap increases.
arXiv comment13 pages, 16 figures. accepted for publication in Physical Review B
References in corpus (15)
- Universality and Critical Behavior at the Mott transition
- Full orbital calculation scheme for materials with strongly correlated electrons
- Finite temperature numerical renormalization group study of the Mott-transition
- Mott-Hubbard Metal-Insulator Transition in Paramagnetic V_2O_3: a LDA+DMFT(QMC) Study
- Mutual Experimental and Theoretical Validation of Bulk Photoemission Spectra of Sr1-xCaxVO3
- Prominent quasi-particle peak in the photoemission spectrum of the metallic phase of V_2O_3
- Electronic Structure of Paramagnetic V_2O_3: Strongly Correlated Metallic and Mott Insulating Phase
- Orbital occupation, local spin and exchange interactions in V2O3
- Static vs. dynamical mean field theory of Mott antiferromagnets
- Non-local Coulomb interactions and metal-insulator transition in TiO: a cluster LDA+DMFT approach
- Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions
- Orbitally Degenerate Spin-1 Model for Insulating V2O3
- Orbital Switching and the First-Order Insulator-Metal Transition in Paramagnetic V_2O_3
- Spin-1 effective Hamiltonian with three degenerate orbitals: An application to the case of VO
- Filling of the Mott-Hubbard gap in the high temperature photoemission spectrum of (V_0.972Cr_0.028)_2O_3
Cited by in corpus (21)
- Iron pnictides as a new setting for quantum criticality
- A Microscopic View on the Mott transition in Chromium-doped V2O3
- Mott-Hubbard transition in V2O3 revisited
- Inequivalent routes across the Mott transition in V2O3 explored by X-ray absorption
- Ultrafast evolution and transient phases of the prototype out-of-equilibrium Mott-Hubbard material V2O3
- Correlation effects in the iron pnictides
- A Novel High-Pressure Monoclinic Metallic Phase of V2O3
- Metal-Insulator Transition and Lattice Instability of Paramagnetic V2O3
- Room temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering
- Surface dead layer for quasiparticles near a Mott transition
- GW approximation with LSDA+U method and applications to NiO, MnO, and VO
- Mott transition in Cr-doped V2O3 studied by ultrafast reflectivity: electron correlation effects on the transient response
- Valence band electronic structure of V2O3: identification of V and O bands
- How chromium doping affects the correlated electronic structure of V2O3
- Optical properties of V2O3 in its whole phase diagram
- Uncovering the mechanism of the impurity-selective Mott transition in paramagnetic VO
- Evolution of the electronic structure of a Mott system across its phase diagram: an X-ray absorption spectroscopy study of (V(1-x)Crx)2O3
- Strongly correlated metal interfaces in the Gutzwiller approximation
- Fermi Surface of Metallic VO from Angle-Resolved Photoemission: Mid-level Filling of Bands
- Imaging the itinerant-to-localized transmutation of electrons across the metal-to-insulator transition in VO
- Role of surface termination in the metal-insulator transition of VO(0001) ultrathin films