Valence band electronic structure of V2O3: identification of V and O bands

Abstract

We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20-6000 eV) and combined with GW calculations, allow us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s at about 8 eV binding energy. From this comparative analysis we can conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation of the O 2p and V 3d yield, thus confirming that bulk sensitivity is an essential requirement for the detection of this coherent low energy excitation.

References in corpus (4)

• Enhanced Crystal Field Splitting and Orbital Selective Coherence by Strong Correlations in V_2O_3
• Surface dead layer for quasiparticles near a Mott transition
• Photoemission study of (V${}_{1-x}$M${}_x$)${}_2$O${}_3$ (M=Cr, Ti)
• Importance of the V 3d-O 2p hybridization in the Mott-Hubbard material V2O3

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• Optical properties of V2O3 in its whole phase diagram
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• Delocalization of dark and bright excitons in flat-band materials and the optical properties of V${}_2$O${}_5$
• Robustness of electronic screening effects in electron spectroscopies: example of V${}_2$O${}_5$
• Dichroism in time-resolved ARPES and valence band orbital nature in BaNiS2
• Metal to insulator transition at the surface of $V_2{O}_3$ thin films: an in-situ view
• Electronic and magnetic properties of NiS_{2-x}Se_x: a comparative study