Evolution of spectral function in a doped Mott insulator : surface vs. bulk contributions

Abstract

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $L{a}_{1-x}C{a}_{x}V{O}_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, $U/W$, is shown to describe consistently the spectral evolution.

Revtex, 4 pages, 3 postscript figures. To appear in Phys. Rev. Lett