Surface effects in doping a Mott insulator

Abstract

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator is driven by a combination of charge transfer effects and enhanced correlation effects. Approaching a Mott insulating phase from the metallic side, we show that a dead layer forms at the surface of the solid, where quasiparticle amplitudes are exponentially suppressed. Surface correlation and charge transfer effects can be strongly impacted by changes of the hopping integrals at the surface.

accepted in Phys. Rev. B

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Cited by in corpus (9)

• Dynamical mean-field theory of indirect magnetic exchange
• Charge redistribution in correlated heterostuctures within nonequilibrium real-space dynamical mean-field theory
• Resonance Effects in Correlated Multilayer Heterostructures
• Competition between reduced delocalization and charge transfer effects for a two-band Hubbard model
• One-step approach to ARPES from strongly correlated solids: a Mott-Hubbard system
• Spectral properties of heterostructures containing half-metallic ferromagnets in the presence of local many-body correlations
• Electrical field induced shift of the Mott Metal-Insulator transition in thin films
• Field effect on surface states in a doped Mott-Insulator thin film
• Interaction and temperature effects on the magneto-optical conductivity of Weyl liquids