Interfaces of correlated electron systems: Proposed mechanism for colossal electroresistance

Abstract

Mott's metal-insulator transition at an interface due to band bending is studied by the density matrix renormalization group (DMRG). We show that the result can be recovered by a simple modification of the conventional Poisson's equation approach used in semi-conductor heterojunctions. A novel mechanism of colossal electroresistance is proposed, which incorporates the hysteretic behavior of the transition in higher dimensions.

arXiv comment5 pages, 3 figures, title changed

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