Density of States and Magnetic Correlations at a Metal-Mott Insulator Interface

Abstract

The possibility of novel behavior at interfaces between strongly and weakly correlated materials has come under increased study recently. In this paper, we use determinant Quantum Monte Carlo to determine the inter-penetration of metallic and Mott insulator physics across an interface in the two dimensional Hubbard Hamiltonian. We quantify the behavior of the density of states at the Fermi level and the short and long range antiferromagnetism as functions of the distance from the interface and with different interaction strength, temperature and hopping across the interface. Induced metallic behavior into the insulator is evident over several lattice spacings, whereas antiferromagnetic correlations remain small on the metallic side. At large interface hopping, singlets form between the two boundary layers, shielding the two systems from each other.

7 pages, 6 figures

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Cited by in corpus (5)

• Electronics with correlated oxides: SrVO${}_3$/SrTiO${}_3$ as a Mott transistor
• Mottness collapse without metallisation in the domain walls of triangular-lattice Mott insulator 1T-TaS${}_2$
• Magnetism, transport, and thermodynamics in two-dimensional half-filled Hubbard superlattices
• Quasi-particle propagation across semiconductor-Mott insulator interfaces
• Bound States at Semiconductor -- Mott Insulator Interfaces