Polarization screening and induced carrier density at the interface of LaAlO${}_3$ overlayer on SrTiO${}_3$ (001)

Abstract

We investigate the role of lattice polarization in determination of induced carrier density at the $n$-type interface of LaAlO${}_3$ overlayer on SrTiO${}_3$ (001) by carrying out density-functional-theory calculations. When no oxygen vacancy or defect is present, the magnitude of polarization screening in the LaAlO${}_3$ layers is found to be correlated with the carrier charge induced at the interface. For the interfaces with a few LaAlO${}_3$ layers, the induced charge carrier is compensated by the electrostatic screening and consequently its density remains far less than 0.5 electrons per unit cell.

arXiv comment4 pages, 4 figures

References in corpus (10)

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• Why Some Interfaces Cannot be Sharp
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• Avoiding the polarization catastrophe in LaAlO3 overlayers on SrTiO3(001) through a polar distortion
• Profiling the interface electron gas of LaAlO3/SrTiO3 heterostructures by hard X-ray photoelectron spectroscopy
• Origin of Metallic States at Heterointerface between Band Insulators LaAlO${}_3$ and SrTiO${}_3$
• Polarization enhancement in two- and three-component ferroelectric superlattices

Cited by in corpus (5)

• Electron Accumulation and Emergent Magnetism in LaMnO3/SrTiO3 Heterostructures
• Creating Two-Dimensional Electron Gas in Nonpolar Oxide Interface via Polarization Discontinuity: First-Principles Analysis of CaZrO3/SrTiO3 Heterostructure
• Electronic charge redistribution in LaAlO${}_3$(001) thin films deposited at SrTiO${}_3$(001) substrate: First principles analysis and the role of stoichiometry
• Modulation of electron carrier density at the n-type LaAlO3/SrTiO3 interface by water adsorption
• La interstitial defect-induced insulator-metal transition in oxide heterostructures LaAlO3/SrTiO3