Gate-tunable transport properties of in-situ capped Bi${}_2$Te${}_3$ topological insulator thin films

Prosper Ngabonziza, Martin P. Stehno, Hiroaki Myoren +3

Combining the ability to prepare high-quality, intrinsic Bi${}_2$Te${}_3$ topological insulator thin films of low carrier density with in-situ protective capping, we demonstrate a pron…