P. Ngabonziza

activity

20142026

most citedGate-tunable transport properties of in-situ capped Bi

_{2}

_{3}

topological insulator thin films

39 citations · 167 across the 17 of their papers we have counts for

collaborators

Showing 2019Show all

2 papers · 1 filter

cond-mat.mtrl-sci2019★ 15 cited

Josephson Effect and Charge Distribution in Thin Bi $_{2}$ Te $_{3}$ Topological Insulators

Martin P. Stehno, Prosper Ngabonziza, Hiroaki Myoren +1

Thin layers of topological insulator materials are quasi-two-dimensional systems featuring a complex interplay between quantum confinement and topological band structure. To unders…

cond-mat.mtrl-sci2019★ 21 cited

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO $_{3}$ /SrZrO $_{3}$ heterostructures

Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle +4

By inserting a SrZrO $_{3}$ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement…

Josephson Effect and Charge Distribution in Thin Bi2​Te3​ Topological Insulators

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3​/SrZrO3​ heterostructures

Josephson Effect and Charge Distribution in Thin Bi $_{2}$ Te $_{3}$ Topological Insulators

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO $_{3}$ /SrZrO $_{3}$ heterostructures