In-situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects

Abstract

Combined in-situ x-ray photoemission spectroscopy, scanning tunnelling spectroscopy and angle resolved photoemission spectroscopy of molecular beam epitaxy grown Bi2Te3 on lattice mismatched substrates reveal high quality stoichiometric thin films with topological surface states without a contribution from the bulk bands at the Fermi energy. The absence of bulk states at the Fermi energy is achieved without counter doping. We observe that the surface morphology and electronic band structure of Bi2Te3 are not affected by in-vacuo storage and exposure to oxygen, whereas major changes are observed when exposed to ambient conditions. These films help define a pathway towards intrinsic topological devices.

8 pages, 5 figures

References in corpus (8)

• Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Quasiparticle Dynamics in Reshaped Helical Dirac Cone of Topological Insulators
• Intrinsic conduction through topological surface states of insulating Bi${}_2$Te${}_3$ epitaxial thin films
• Restoring Pristine Bi2Se3 Surface with an Effective Se Decapping Process
• Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films
• Crystal structure and epitaxy of Bi2Te3 films grown on Si

Cited by in corpus (13)

• Gate-tunable transport properties of in-situ capped Bi${}_2$Te${}_3$ topological insulator thin films
• Absence of magnetic-proximity effect at the interface of Bi${}_2$Se${}_3$ and (Bi,Sb)${}_2$Te${}_3$ with EuS
• Wafer-scale epitaxial growth of the thickness-controllable van der Waals ferromagnet CrTe2 for reliable magnetic memory applications
• Quantum Transport and Potential of Topological States for Thermoelectricity in Bi${}_2$Te${}_3$ Thin Films
• Top-down fabrication of bulk-insulating topological insulator nanowires for quantum devices
• Josephson Effect and Charge Distribution in Thin Bi${}_2$Te${}_3$ Topological Insulators
• Bulk contribution to magnetotransport properties of low defect-density Bi${}_2$Te${}_3$ topological insulator thin films
• Probing edge state conductance in ultra-thin topological insulator films
• Real-space characterization of reactivity towards water at Bi2Te3(111) surface
• Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
• Spectroscopic signature of surface states and bunching of bulk subbands in topological insulator (Bi${}_{0.4}$Sb${}_{0.6}$)${}_2$Te${}_3$ thin films
• Environmental Doping-Induced Degradation of the Quantum Anomalous Hall Insulators
• Integration of topological insulator Josephson junctions in superconducting qubit circuits