Role of Se vacancies on Shubnikov de Haas oscillations in Bi2Se3: a combined magneto-resistance and positron annihilation study

Abstract

Magneto resistance measurements coupled with positron lifetime measurements, to characterize the vacancy type defects, have been carried out on the topological insulator (TI) system Bi2Se3, of varying Se/Bi ratio. Pronounced Shubnikov de Haas (SdH) oscillations are seen in nominal Bi2Se3.1 crystals for measurements performed in magnetic fields up to 15 T in the 4 K to 10 K temperature range, with field applied perpendicular to the (001) plane of the crystal. The quantum oscillations, characteristic of 2D electronic structure, are seen only in the crystals that have a lower concentration of Se vacancies, as inferred from positron annihilation spectroscopy.

3 pages, 7 figures

References in corpus (2)

• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Controlling bulk conductivity in topological insulators: Key role of anti-site defects

Cited by in corpus (5)

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• Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in Bi${}_2$Se${}_3$ with high charge-carrier density
• Coupling-decoupling of conducting topological surface states in thick Bi${}_2$Se${}_3$ single crystals
• Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
• Magnetic interactions of 4$f$ electrons in the topological insulator chalcogenide Bi${}_2$Se${}_3$