Magneto-transport behaviour of Bi2Se3-xTex: Role of disorder

Abstract

Magnetoresistance and Hall resistance measurements have been carried out in fastcooled single crystals of Bi2Se3-xTex (x: 0 to 2) in 4 to 300 K temperature range, under magnetic fields up to 15 T. The variation of resistivity with temperature that points to a metallic behaviour in Bi2Se3, shows an upturn at low temperatures in the Te doped samples. Magnetoresistance measurements in Bi2Se3 show clear signatures of Shubnikov de Hass oscillations that gets suppressed in the Te doped samples. In the Bi2SeTe2 sample, the magneto-resistance shows a cusp like positive magneto-resistance at low magnetic fields and low temperatures, a feature associated with weak antilocalisation (WAL), that crosses over to negative magneto-resistance at higher fields. The qualitatively different magnetotransport behaviour seen in Bi2SeTe2 as compared to Bi2Se3 is rationalised in terms of the disorder, through an estimate of the carrier density, carrier mobility and an analysis in terms of the Ioffe Regel criterion with support from Hall Effect measurements.

12 pages, 6 figures

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Cited by in corpus (3)

• Coupling-decoupling of conducting topological surface states in thick Bi${}_2$Se${}_3$ single crystals
• High Field Magneto-Transport of Mixed Topological Insulators Bi2Se3-xTex (x = 0, 1, 2 & 3)
• Non-contact mutual inductance based measurement of an inhomogeneous topological insulating state in Bi2Se3 single crystals with defects