Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

Abstract

We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k dielectric. Atomic force microscopy study shows that ALD Al2O3 is uniformly grown on this layer-structured channel material. Electrical characterization reveals that the right selection of ALD precursors and the related surface chemistry play a critical role in device performance of Bi2Te3 based TI FETs. We realize both top-gate and bottom-gate control on these devices, and the highest modulation rate of 76.1% is achieved by using simultaneous dual gate control.

4 pages, 3 figures

References in corpus (7)

• Topological Insulators
• Two Dimensional Atomic Crystals
• $Z_2$ Topological Order and the Quantum Spin Hall Effect
• Topological Insulators with Inversion Symmetry
• Experimental demonstration of the topological surface states protected by the time-reversal symmetry
• Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
• Insulating behavior in ultra-thin bismuth selenide field effect transistors

Cited by in corpus (12)

• MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
• The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition
• Observation of Quantum-Tunneling Modulated Spin Texture in Ultrathin Topological Insulator Bi2Se3 Films
• MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming
• Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films
• Gate-tunable transport properties of in-situ capped Bi${}_2$Te${}_3$ topological insulator thin films
• Conductance modulation in topological insulator Bi2Se3 thin films with ionic liquid gating
• Quantum Transport and Potential of Topological States for Thermoelectricity in Bi${}_2$Te${}_3$ Thin Films
• Simultaneous electrical-field-effect modulation of both top and bottom Dirac surface states of epitaxial thin films of three-dimensional topological insulators
• Using ultra-thin parylene films as an organic gate insulator in nanowire field-effect transistors
• Momentum relaxation effects in 2D-Xene field effect device structures
• Magnetoexcitons and optical absorption of bilayer-structured topological insulators