The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

Abstract

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.

arXiv commentsubmitted to Appl. Phys. Lett

References in corpus (8)

• Two-Dimensional Gas of Massless Dirac Fermions in Graphene
• Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
• Two Dimensional Atomic Crystals
• Boron nitride substrates for high-quality graphene electronics
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• MoS2 Dual-Gate MOSFET with Atomic-Layer-Deposited Al2O3 as Top-Gate Dielectric
• Observation of quantum-Hall effect in gated epitaxial graphene grown on SiC (0001)
• Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

Cited by in corpus (15)

• High Performance Single Layered WSe2 p-FETs with Chemically Doped Contacts
• Channel Length Scaling of MoS2 MOSFETs
• Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
• Molecular Doping of Multilayer MoS2 Field-effect Transistors: Reduction in Sheet and Contact Resistances
• Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
• MoS2 Nanoribbon Transistors: Transition from Depletion-mode to Enhancement-mode by Channel Width Trimming
• Direct atomic layer deposition of ultra-thin $A{l}_2{O}_3$ and $Hf{O}_2$ films on gold-supported monolayer $Mo{S}_2$
• Buffer Layer Engineering on Graphene via Various Oxidation Methods for Atomic Layer Deposition
• Wafer-scale solution-derived molecular gate dielectrics for low-voltage graphene electronics
• Atomic layer deposition of Y2O3 on h-BN for a gate stack in graphene FETs
• The optical properties of transferred graphene and the dielectrics grown on it obtained by ellipsometry
• Scalable transparent conductive thin films with electronically passive interfaces for direct chemical vapor deposition of 2D materials
• Chemical vapor deposition of hexagonal boron nitride and its use in electronic devices
• Transconductance as a Probe of Valley Thermodynamics in Multilayer WSe${}_2$
• Direct atomic layer deposition of ultrathin aluminium oxide on monolayer $Mo{S}_2$ exfoliated on gold: the role of the substrate