The Integration of High-k Dielectric on Two-Dimensional Crystals by Atomic Layer Deposition

Abstract

We investigate the integration of Al2O3 high-k dielectric on two-dimensional (2D) crystals of boron nitride (BN) and molybdenum disulfide (MoS2) by atomic layer deposition (ALD). We demonstrate the feasibility of direct ALD growth with trimethylaluminum(TMA) and water as precursors on both 2D crystals. Through theoretical and experimental studies, we found that the initial ALD cycles play the critical role, during which physical adsorption dominates precursor adsorption at the semiconductor surface. We model the initial ALD growth stages at the 2D surface by analyzing Lennard-Jones Potentials, which could guide future optimization of the ALD process on 2D crystals.

submitted to Appl. Phys. Lett

References in corpus (4)

• Two Dimensional Atomic Crystals
• Boron nitride substrates for high-quality graphene electronics
• Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
• Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

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• Transconductance as a Probe of Valley Thermodynamics in Multilayer WSe${}_2$
• Chemical vapor deposition of hexagonal boron nitride and its use in electronic devices
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