most citedAtomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

39 citations · 39 across the 1 of their papers we have counts for

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1 paper

cond-mat.mtrl-sci2011★ 39 cited

Atomic-Layer-Deposited Al2O3 on Bi2Te3 for Topological Insulator Field-Effect Transistors

Han Liu, Peide D. Ye

We report dual-gate modulation of topological insulator field-effect transistors (TI FETs) made on Bi2Te3 thin flakes with integration of atomic-layer-deposited (ALD) Al2O3 high-k…