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Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
Adam T. Neal, Yuchen Du, Han Liu +1
We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in th…
Black Phosphorus-Monolayer MoS2 van der Waals Heterojunction P-N Diode
Yexin Deng, Zhe Luo, Nathan J. Conrad +7
Phosphorene, an elemental 2D material, which is the monolayer of black phosphorus, has been mechanically exfoliated recently. In its bulk form, black phosphorus shows high carrier…
The Effect of Dielectric Capping on Few-Layer Phosphorene Transistors: Tuning the Schottky Barrier Heights
Han Liu, Adam T. Neal, Mengwei Si +2
Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-laye…
Switching Mechanism in Single-Layer Molybdenum Disulfide Transistors: an Insight into Current Flow across Schottky Barriers
Han Liu, Mengwei Si, Yexin Deng +6
In this article, we study the properties of metal contacts to single-layer molybdenum disulfide (MoS2) crystals, revealing the nature of switching mechanism in MoS2 transistors. On…
Magneto-Transport in MoS2: Phase Coherence, Spin Orbit Scattering and the Hall Factor
Adam T. Neal, Han Liu, Jiangjiang Gu +1
We have characterized phase coherence length, spin orbit scattering length, and the Hall factor in n-type MoS2 2D crystals via weak localization measurements and Hall-effect measur…
Statistical Study of Deep Sub-Micron Dual-Gated Field-Effect Transistors on Monolayer CVD Molybdenum Disulfide Films
Han Liu, Mengwei Si, Sina Najmaei +5
Monolayer Molybdenum Disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectroni…