Two-Dimensional TaSe2 Metallic Crystals: Spin-Orbit Scattering Length and Breakdown Current Density
arXiv:1408.3753 · doi:10.1021/nn5027164
Abstract
We have determined the spin-orbit scattering length of two-dimensional layered 2H-TaSe2 metallic crystals by detailed characterization of the weak anti-localization phenomena in this strong spin-orbit interaction material. By fitting the observed magneto-conductivity, the spin-orbit scattering length for 2H-TaSe2 is determined to be 17 nm in the few-layer films. This small spin-orbit scattering length is comparable to that of Pt, which is widely used to study the spin Hall effect, and indicates the potential of TaSe2 for use in spin Hall effect devices. In addition to strong spin-orbit coupling, a material must also support large charge currents to achieve spin-transfer-torque via the spin Hall effect. Therefore, we have characterized the room temperature breakdown current density of TaSe2 in air, where the best breakdown current density reaches 3.710 A/cm. This large breakdown current further indicates the potential of TaSe2 for use in spin-torque devices and two-dimensional device interconnect applications.
to be published in ACS Nano
References in corpus (6)
- Electric Field Effect in Atomically Thin Carbon Films
- Two Dimensional Atomic Crystals
- Channel Length Scaling of MoS2 MOSFETs
- Thermally-Limited Current Carrying Ability of Graphene Nanoribbons
- Pseudogap and charge density waves in two dimensions
- Experimental Verification of Comparability between Spin-Orbit and Spin-Diffusion Lengths
Cited by in corpus (3)
- High Current Density and Low Thermal Conductivity of Atomically Thin Semimetallic WTe2
- Enhancing charge-density-wave order in 1T-TiSe2 nanosheet by encapsulation with hexagonal Boron Nitride
- Structural, elastic, bonding, optoelectronic, and some thermo-physical properties of transition metal dichalcogenides ZrX2 (X = S, Se, Te): Insights from ab-initio calculations