Weak Localization in Few-Layer Black Phosphorus

Abstract

We have conducted a comprehensive investigation into the magneto-transport properties of few-layer black phosphorus in terms of phase coherence length, phase coherence time, and mobility via weak localization measurement and Hall-effect measurement. We present magnetoresistance data showing the weak localization effect in bare p-type few-layer black phosphorus and reveal its strong dependence on temperature and carrier concentration. The measured weak localization agrees well with the Hikami-Larkin-Nagaoka model and the extracted phase coherence length of 104 nm at 350 mK, decreasing as ~T^-0.51+-0.05 with increased temperature. Weak localization measurement allows us to qualitatively probe the temperature-dependent phase coherence time τ, which is in agreement with the theory of carrier interaction in the diffusive regime. We also observe the universal conductance fluctuation phenomenon in few-layer black phosphorus within moderate magnetic field and low temperature regime.

arXiv commentTo be published in 2D Materials

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• Relationship between conductance fluctuation and weak localization in graphene
• Tunable quantum interference effect on magnetoconductivity in few-layer black phosphorus