Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point
arXiv:0709.0493 · doi:10.1103/PhysRevB.77.155429
Abstract
We measured the conductance fluctuation of bi- and trilayer graphene devices prepared on mechanical exfoliated graphene by an all-dry, lithography-free process using an ultrathin quartz filament as a shadow mask. Reproducible fluctuations in conductance as a function of applied gate voltage or magnetic field were found. As the gate voltage was tuned so that the graphene device was pushed to the charge neutral point, the amplitude of the conductance fluctuation was found to be suppressed quickly from a value consistent with universal conductance fluctuation when the devices were still well within weakly disordered regime. The possible physical origins of the suppression are discussed.
4 pages, 5 figures
References in corpus (12)
- Energy Band Gap Engineering of Graphene Nanoribbons
- The structure of suspended graphene sheets
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- Asymmetry gap in the electronic band structure of bilayer graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Weak antilocalization in epitaxial graphene: evidence for chiral electrons
- Influence of trigonal warping on interference effects in bilayer graphene
- Localized states at zigzag edges of bilayer graphene
- Lithography-Free Fabrication of Graphene Devices
- Weak localisation in bilayer graphene
Cited by in corpus (21)
- AFM local oxidation nanolithography of graphene
- Disorder and Electronic Transport in Graphene
- Inelastic scattering in a monolayer graphene sheet; a weak-localization study
- Quantum Interference in Graphene Nanoconstrictions
- Magnetoresistance in Single Layer Graphene: Weak Localization and Universal Conductance Fluctuation Studies
- Conductance fluctuations and field asymmetry of rectification in graphene
- Mesoscopic conductance fluctuations in graphene
- Imaging coherent transport in graphene (Part II): Probing weak localization
- Semiclassical magnetotransport in graphene n-p junctions
- Non-Ergodicity & Microscopic Symmetry Breaking of the Conductance Fluctuations in Disordered Mesoscopic Graphene
- Finite-difference method for transport of two-dimensional massless Dirac fermions in a ribbon geometry
- Interface states and anomalous quantum oscillations in graphene hybrid structures
- Localized States at Zigzag Edges of Multilayer Graphene and Graphite Steps
- Weak Localization in Few-Layer Black Phosphorus
- Using light and heat to controllably switch and reset disorder configuration in nanoscale devices
- Mapping universal conductance fluctuations
- Universal Conductance Fluctuations in Mesoscopic Systems with Superconducting Leads: Beyond the Andreev Approximation
- Disorder correction to the minimal conductance of a nodal-point semimetal
- Conductance fluctuations in graphene devices with superconducting contacts in different charge density regimes
- Fermi energy sensitive universal conductance fluctuations in anisotropic materials
- Weak localization and universal conductance fluctuations in large area twisted bilayer graphene