Lithography-Free Fabrication of Graphene Devices
arXiv:cond-mat/0612128 · doi:10.1063/1.2719607
Abstract
We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphene during lithographic process. This technique was used to prepare devices for electrical transport as well as planar tunnel junction studies of n-layer graphene (nLG), with n = 1, 2, 3 and higher. We observed localization behavior and an apparent reduction of density of states (DOS) near the Fermi energy in nLG.
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Cited by in corpus (9)
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- The quantum scattering time and its implications on scattering sources in graphene (Supplementary)
- Lithography-free Fabrication of High Quality Substrate-supported and Freestanding Graphene devices
- Suppression of conductance fluctuation in weakly disordered mesoscopic graphene samples near the charge neutral point
- Spatially resolved electronic inhomogeneities of graphene due to subsurface charges
- Interface states and anomalous quantum oscillations in graphene hybrid structures
- Graphene quantum dots probed by scanning tunneling spectroscopy and transport spectroscopy after local anodic oxidation
- Tunneling Spectroscopy of Graphene using Planar Pb Probes
- Mask aligner for ultrahigh vacuum with capacitive distance control