56 citations · 84 across the 2 of their papers we have counts for
2 papers
cond-mat.mtrl-sci2019★ 28 cited
Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3
Justin R. Rodriguez, William Murray, Kazunori Fujisawa +11
Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate…
cond-mat.mes-hall2006★ 56 cited
Lithography-Free Fabrication of Graphene Devices
N. Staley, H. Wang, C. Puls +5
We have developed a lithography-free, all-dry process for fabricating graphene devices using an ultrathin quartz filament as a shadow mask to avoid possible contamination of graphe…