Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3

Abstract

Ferroelectric semiconductor field effect transistors (FeSmFETs), which employ ferroelectric semiconducting thin crystals of α-In2Se3 as the channel material as opposed to the gate dielectric in conventional ferroelectric FETs (FeFETs) were prepared and measured from room to the liquid-helium temperatures. These FeSmFETs were found to yield evidence for the reorientation of the electrical polarization and an electric field induced metallic state in α-In2Se3. Our findings suggest that FeSmFETs can serve as a platform for the fundamental study of ferroelectric metals as well as the exploration of the integration of data storage and logic operations in the same device.

arXiv comment15 pages, 4 figures

References in corpus (5)

• Out-of-plane Piezoelectricity and Ferroelectricity in Layered $\alpha$-In2Se3 Nano-flakes
• A Ferroelectric Semiconductor Field-Effect Transistor
• A ferroelectric-like structural transition in a metal
• Gate controlled photocurrent generation mechanisms in high-gain In2Se3 phototransistors
• `Ferroelectric' Metals Reexamined: Fundamental Mechanisms and Design Considerations for New Materials

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