M. Terrones

most citedHall and field-effect mobilities in few layered

p

-WSe

_{2}

field-effect transistors

132 citations · 169 across the 3 of their papers we have counts for

collaborators

3 papers

physics.optics2017★ 8 cited

Tunable Resonance Coupling in Single Si Nanoparticle-Monolayer WS2 Structures

Sergey Lepeshov, Mingsong Wang, Alex Krasnok +8

Two-dimensional semiconducting transition metal dichalcogenides (TMDCs) are extremely attractive materials for optoelectronic applications in the visible and near-IR range. Here, w…

cond-mat.mes-hall2015★ 29 cited

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Junjie Wang, Daniel Rhodes, Simin Feng +7

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…

cond-mat.mes-hall2015★ 132 cited

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors

N. R. Pradhan, D. Rhodes, S. Memaran +9

Here, we present a temperature ( $T$ ) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe $_{2}$ exfoliated onto SiO $_{2}$ .…

Tunable Resonance Coupling in Single Si Nanoparticle-Monolayer WS2 Structures

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Hall and field-effect mobilities in few layered p-WSe2​ field-effect transistors

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors