activity
20152023
most citedHall and field-effect mobilities in few layered -WSe field-effect transistors

132 citations · 182 across the 10 of their papers we have counts for

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8 papers · 1 filter

cond-mat.mes-hall2021

Second- and third-order optical susceptibilities in bidimensional semiconductors near excitons states

Lucas Lafeta, Aurea Corradi, Tianyi Zhang +6

Semiconducting Transition Metal Dichalcogenides (TMDs) have significant nonlinear optical effects. In this work we have used second-harmonic generation (SHG) and the four-wave mixi…

cond-mat.mes-hall2020

Photo-degradation Protection in 2D In-Plane Heterostructures Revealed by Hyperspectral Nanoimaging: the Role of Nano-Interface 2D Alloys

Alireza Fali, Tianyi Zhang, Jason Patrick Terry +8

Single-layer heterostructures exhibit striking quasiparticle properties and many-body interaction effects that hold promise for a range of applications. However, their properties c…

cond-mat.mes-hall2019

Nanoscale patterning of quasiparticle band alignment

Søren Ulstrup, Cristina E. Giusca, Jill A. Miwa +10

Control of atomic-scale interfaces between materials with distinct electronic structures is crucial for the design and fabrication of most electronic devices. In the case of two-di…

cond-mat.mes-hall2019

Nonlinear dark-field imaging of 1D defects in monolayer dichalcogenides

Bruno R. Carvalho, Yuanxi Wang, Kazunori Fujisawa +10

Extended defects with one dimensionality smaller than that of the host, such as 2D grain boundaries in 3D materials or 1D grain boundaries in 2D materials, can be particularly dama…

cond-mat.mes-hall2019

Strain Modulated Superlattices in Graphene

R. Banerjee, V. -H. Nguyen, T. Granzier-Nakajima +6

Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numer…

cond-mat.mes-hall2018

Phase Modulators Based on High Mobility Ambipolar ReSe2 Field-Effect Transistors

Nihar R. Pradhan, Carlos Garcia, Bridget Isenberg +11

We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous r…