M. Terrones

activity

20152021

most citedHall and field-effect mobilities in few layered

p

-WSe

_{2}

field-effect transistors

132 citations · 182 across the 9 of their papers we have counts for

collaborators

Showing 2015Show all

2 papers · 1 filter

cond-mat.mes-hall2015★ 29 cited

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Junjie Wang, Daniel Rhodes, Simin Feng +7

Two key subjects stand out in the pursuit of semiconductor research: material quality and contact technology. The fledging field of atomically thin transition metal dichalcogenides…

cond-mat.mes-hall2015★ 132 cited

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors

N. R. Pradhan, D. Rhodes, S. Memaran +9

Here, we present a temperature ( $T$ ) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe $_{2}$ exfoliated onto SiO $_{2}$ .…

Gate-modulated conductance of few-layer WSe_2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states

Hall and field-effect mobilities in few layered p-WSe2​ field-effect transistors

Hall and field-effect mobilities in few layered $p$ -WSe $_{2}$ field-effect transistors