A Ferroelectric Semiconductor Field-Effect Transistor

Abstract

Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the device. As a result, the devices are of potential to use in non-volatile memory technology, but suffer from short retention times, which limits their wider application. Here we report a ferroelectric semiconductor field-effect transistor in which a two-dimensional ferroelectric semiconductor, indium selenide (α-In2Se3), is used as the channel material in the device. α-In2Se3 was chosen due to its appropriate bandgap, room temperature ferroelectricity, ability to maintain ferroelectricity down to a few atomic layers, and potential for large-area growth. A passivation method based on the atomic-layer deposition of aluminum oxide (Al2O3) was developed to protect and enhance the performance of the transistors. With 15-nm-thick hafnium oxide (HfO2) as a scaled gate dielectric, the resulting devices offer high performance with a large memory window, a high on/off ratio of over 108, a maximum on-current of 862 μA μm-1, and a low supply voltage.

44 pages, 16 figures

References in corpus (2)

• Out-of-plane Piezoelectricity and Ferroelectricity in Layered $\alpha$-In2Se3 Nano-flakes
• Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors

Cited by in corpus (26)

• Interfacial ferroelectricity in rhombohedral-stacked bilayer transition metal dichalcogenides
• Post-CMOS Compatible Aluminum Scandium Nitride/2D Channel Ferroelectric Field-Effect-Transistor
• Reconfigurable Multifunctional van der Waals Ferroelectric Devices and Logic Circuits
• Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
• Electronic bandstructure of in-plane ferroelectric van der Waals ${\beta }^{\prime }-I{n}_{2}S{e}_3$
• Structural phase transitions between layered Indium Selenide for inte-grated photonic memory
• $\alpha$-In${}_2$Se${}_3$ based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories
• Achieving ferroelectricity in a centrosymmetric high-performance semiconductor by strain engineering
• Electric field induced metallic behavior in thin crystals of ferroelectric α-In2Se3
• Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation
• Quantum Confinement and Electronic Structure at the Surface of van der Waals Ferroelectric α-In${}_2$Se${}_3$
• High-Efficient ab initio Bayesian Active Learning Method and Applications in Prediction of Two-dimensional Functional Materials
• Voting Data-Driven Regression Learning for Discovery of Functional Materials and Applications to Two-Dimensional Ferroelectric Materials
• Proton-mediated reversible switching of metastable ferroelectric phases with low operation voltages
• Indium selenides for next-generation low-power computing devices
• Tunable photochemical deposition of silver nanostructures on layered ferroelectric CuInP${}_2$S6
• Ferroelectric valley valves with graphene/MoTe${}_2$ van der Waals heterostructures
• Optical detection of the sliding ferroelectric switching in hBN with a WSe2 monolayer
• Magnetic Field-Induced Polar Order in Monolayer Molybdenum Disulfide Transistors
• Numerical study of synaptic behavior in amorphous HfO2-based ferroelectric-like FETs generated by voltage-driven ion migration
• Current-induced control of the polarization state in a polar metal based heterostructure SnSe/WTe${}_2$
• Atomic and Electronic Structure of Strongly Charged Domain Walls in van der Waals α-In${}_2$Se${}_3$
• The ground state of CuInP${}_2$S${}_6$ thin films: A study of the deep potential method
• Many-body description of two-dimensional van der Waals ferroelectric $\alpha -$In${}_2$Se${}_3$
• Room-Temperature Noncolinear Ferroelectricity in van der Waals WO${}_2$Cl${}_2$ with a Wide Bandgap
• Electrical Modulation and Probing of Antiferromagnetism in Hybrid Multiferroic Heterostructures