activity
20102024
most citedA Ferroelectric Semiconductor Field-Effect Transistor

645 citations · 999 across the 20 of their papers we have counts for

collaborators

21 papers

cond-mat.mtrl-sci2024★ 1 cited

Small Signal Capacitance in Ferroelectric HZO: Mechanisms and Physical Insights

Revanth Koduru, Atanu K. Saha, Martin M. Frank +1

This study presents a theoretical investigation of the physical mechanisms governing small signal capacitance in ferroelectrics, focusing on Hafnium Zirconium Oxide. Utilizing a ti…

cs.ET2023

Reimagining Sense Amplifiers: Harnessing Phase Transition Materials for Current and Voltage Sensing

Md Mazharul Islam, Shamiul Alam, Mohammad Adnan Jahangir +5

Energy-efficient sense amplifier (SA) circuits are essential for reliable detection of stored memory states in emerging memory systems. In this work, we present four novel sense am…

cs.ET2023★ 1 cited

Comparative Evaluation of Memory Technologies for Synaptic Crossbar Arrays -- Part I: Robustness-driven Device-Circuit Co-Design and System Implications

Chunguang Wang, Jeffry Victor, Sumeet K. Gupta

In-memory computing (IMC) utilizing synaptic crossbar arrays is promising for energy-efficient deep neural network (DNN) accelerators. Various technologies (CMOS and post-CMOS) hav…

cs.ET2023★ 1 cited

XNOR-VSH: A Valley-Spin Hall Effect-based Compact and Energy-Efficient Synaptic Crossbar Array for Binary Neural Networks

Karam Cho, Sumeet Kumar Gupta

Binary neural networks (BNNs) have shown an immense promise for resource-constrained edge artificial intelligence (AI) platforms as their binarized weights and inputs can significa…

cond-mat.mtrl-sci2023

Head-to-Head and Tail-to-Tail Domain Wall in Hafnium Zirconium Oxide: A First Principles Analysis of Domain Wall Formation and Energetics

Tanmoy K. Paul, Atanu K. Saha, Sumeet K. Gupta

180° domains walls (DWs) of Head-to-Head/Tail-to-Tail (H-H/T-T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding of the FE attributes…

physics.comp-ph2023

Phase-field Simulations of Polarization Variations in Polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage-Dependence and Dynamics

Revanth Koduru, Imtiaz Ahmed, Atanu K Saha +3

In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We conside…