Compact Modeling of Parasitic Internal Fringe Capacitance Effects on the Threshold Voltage of High-K Gate Dielectric Nanoscale SOI MOSFETs

M. Jagadesh Kumar, Sumeet Kumar Gupta, Vivek Venkataraman

A compact model for the effect of parasitic internal fringe capacitance on threshold voltage in high-K gate dielectric SOI MOSFETs is developed. Our model includes the effects of t…