645 citations · 1.1k across the 19 of their papers we have counts for
19 papers
200 mm Wafer-Scale Monolithic 3D Integration of Atomic Layer-Deposited Oxide Semiconductors
Chang Niu, Linjia Long, Luqi Zheng +9
Monolithic 3D (M3D) integration offers a pathway to overcome the scaling limits of conventional silicon complementary metal-oxide-semiconductor (CMOS) technology by extending dense…
Size-Dependent Band-Tail Localization in Oxide Semiconductors Revealed by Direct Density-of-States Mapping
Chang Niu, Kisoo Nam, Aravindh Shankar +5
Disorder-induced localization is expected to become increasingly important as amorphous oxide semiconductor transistors are scaled toward low-dimensional channels, yet the electron…
Terahertz field-driven nonlinear Hall effect and other second order transport phenomena in two-dimensional tellurene
M. D. Moldavskaya, L. E. Golub, E. Mönch +4
We study terahertz field-driven second-order nonlinear electron transport phenomena, including the nonlinear Hall effect (NLHE), in two-dimensional tellurene flakes. The dc current…
Surface lone-pair polarization probed by quantum-geometric transport in tellurium
Nathanael N. Batista, Wendel S. Paz, Manuel Suárez-Rodríguez +10
Stereochemically active lone pairs are ubiquitous microscopic sources of polarity in molecules and solids, but their collective behavior in crystals is often hidden by symmetry or…
Chirality Driven Ratchet Currents in Two-Dimensional Tellurene with an Asymmetric Grating
M. D. Moldavskaya, L. E. Golub, Chang Niu +2
The emergence of the terahertz (THz) ratchet effect is a rapidly expanding field of research that utilizes broken spatial symmetry in low-dimensional materials to rectify alternati…
Breakdown of Ohm's Law by Disorders in Low-Dimensional Transistors
Chang Niu, Adam Charnas, Jian-Yu Lin +4
Ohm's law provides a fundamental framework for understanding charge transport in conductors and underpins the concept of electrical scaling that has enabled the continuous advancem…
Non-reciprocal Magnetoresistances in Chiral Tellurium
Shuchen Li, Chang Niu, Peide D. Ye +1
Materials with broken fundamental symmetries, such as chiral crystals, provide a rich playground for exploring unconventional spin-dependent transport phenomena. The interplay betw…
Lithography defined semiconductor moires with anomalous in-gap quantum Hall states
Wei Pan, D. Bruce Burckel, Catalin D. Spataru +16
Quantum materials and phenomena have attracted great interest for their potential applications in next-generation microelectronics and quantum-information technologies. In one espe…
Quantum geometry and the electric magnetochiral anisotropy in noncentrosymmetric polar media
Pierpaolo Fontana, Victor Velasco, Chang Niu +6
The electric magnetochiral anisotropy is a nonreciprocal phenomenon accessible via second harmonic transport in noncentrosymmetric, time-reversal invariant materials, in which the…
Ultralow Voltage Operation of p- and n-FETs Enabled by Self-Formed Gate Dielectric and Metal Contacts on 2D Tellurium
Chang Niu, Linjia Long, Yizhi Zhang +6
The ongoing demand for more energy-efficient, high-performance electronics is driving the exploration of innovative materials and device architectures, where interfaces play a cruc…
Terahertz radiation driven nonlinear transport phenomena in two-dimensional tellurene
Erwin Mönch, Mariya D. Moldavskaya, Leonid E. Golub +7
Nonlinear electron transport induced by polarized terahertz radiation is studied in two-dimensional tellurene at room temperature. A direct current, quadratic in the radiation's el…
Tunable Circular Photogalvanic and Photovoltaic Effect in 2D Tellurium with Different Chirality
Chang Niu, Shouyuan Huang, Neil Ghosh +5
Chirality arises from the asymmetry of matters, where two counterparts are the mirror image of each other. The interaction between circular-polarization light and quantum materials…
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium
Chang Niu, Gang Qiu, Yixiu Wang +6
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electric…
Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well
Chang Niu, Gang Qiu, Yixiu Wang +3
Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n…
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si, Joseph Andler, Xiao Lyu +4
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…
Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization
Chang Niu, Gang Qiu, Yixiu Wang +4
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of…
Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene
Gang Qiu, Chang Niu, Yixiu Wang +4
Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manife…
A Ferroelectric Semiconductor Field-Effect Transistor
Mengwei Si, Atanu K. Saha, Shengjie Gao +9
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the dev…