929 citations · 4.1k across the 18 of their papers we have counts for
19 papers
Tunable Chirality-dependent Nonlinear Electrical Responses in 2D Tellurium
Chang Niu, Gang Qiu, Yixiu Wang +6
Tellurium (Te) is an elemental semiconductor with a simple chiral crystal structure. Te in a two-dimensional (2D) form synthesized by solution-based method shows excellent electric…
Mesoscopic Transport of Quantum Anomalous Hall Effect in Sub-Micron Size Regime
Gang Qiu, Peng Zhang, Peng Deng +4
The quantum anomalous Hall (QAH) effect has been demonstrated in two-dimensional topological insulator systems incorporated with ferromagnetism. However, a comprehensive understand…
Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well
Chang Niu, Gang Qiu, Yixiu Wang +3
Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n…
Distinguishing two-component anomalous Hall effect from topological Hall effect
Lixuan Tai, Bingqian Dai, Jie Li +14
In transport, the topological Hall effect (THE) presents itself as non-monotonic features (or humps and dips) in the Hall signal and is widely interpreted as a sign of chiral spin…
Raman Response and Transport Properties of One-Dimensional van der Waals Tellurium Nanowires
Jing-Kai Qin, Pai-Ying Liao, Mengwei Si +15
Tellurium can form nanowires of helical atomic chains. Given their unique one-dimensional van der Waals structure, these nanowires are expected to show remarkably different physica…
Ultrafast Photoinduced Band Splitting and Carrier Dynamics in Chiral Tellurium Nanosheets
Giriraj Jnawali, Yuan Xiang, Samuel M. Linser +10
Trigonal tellurium (Te) is a chiral semiconductor that lacks both mirror and inversion symmetries, resulting in complex band structures with Weyl crossings and unique spin textures…
Gate-tunable Strong Spin-orbit Interaction in Two-dimensional Tellurium Probed by Weak-antilocalization
Chang Niu, Gang Qiu, Yixiu Wang +4
Tellurium (Te) has attracted great research interest due to its unique crystal structure since 1970s. However, the conduction band of Te is rarely studied experimentally because of…
Quantum Hall Effect of Weyl Fermions in Semiconducting n-type Tellurene
Gang Qiu, Chang Niu, Yixiu Wang +4
Dirac and Weyl nodal materials can host low-energy relativistic quasiparticles. Under strong magnetic fields, the topological properties of Dirac/Weyl materials can directly manife…
Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
Gang Qiu, Shouyuan Huang, Mauricio Segovia +5
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoreti…
A Ferroelectric Semiconductor Field-Effect Transistor
Mengwei Si, Atanu K. Saha, Shengjie Gao +9
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the dev…
Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Samuel Berweger, Gang Qiu, Yixiu Wang +7
Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as m…
Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
Gang Qiu, Yixiu Wang, Yifan Nie +4
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hoste…
Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications
Jingkai Qin, Gang Qiu, Jie Jian +9
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire f…
1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport
Yuchen Du, Gang Qiu, Yixiu Wang +4
Experimental demonstrations of 1D van der Waals material tellurium have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements hav…
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang +8
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec…
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang +9
The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a var…
\b{eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect
Hong Zhou, Kerry Maize, Gang Qiu +2
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a hi…
High Performance Depletion/Enhancement-Mode beta-Ga2O3 on Insulator (GOOI) Field-effect Transistors with Record Drain Currents of 600/450 mA/mm
Hong Zhou, Mengwei Si, Sami Alghmadi +3
In this letter, we report on high performance depletion/enhancement (D/E)-mode beta-Ga2O3 on insulator (GOOI) field-effect transistors (FETs) with record high drain currents (ID) o…
Observation of Optical and Electrical In-plane Anisotropy in High-mobility Few-layer ZrTe5
Gang Qiu, Yuchen Du, Adam Charnas +7
Transition metal pentatelluride ZrTe5 is a versatile material in condensed-matter physics and has been intensively studied since the 1980s. The most fascinating feature of ZrTe5 is…