929 citations · 4.1k across the 18 of their papers we have counts for
5 papers · 1 filter
Controlled Growth of a Large-Size 2D Selenium Nanosheet and Its Electronic and Optoelectronic Applications
Jingkai Qin, Gang Qiu, Jie Jian +9
Selenium has attracted intensive attention as a promising material candidate for future optoelectronic applications. However, selenium has a strong tendency to grow into nanowire f…
1D van der Waals Material Tellurium: Raman Spectroscopy under Strain and Magneto-transport
Yuchen Du, Gang Qiu, Yixiu Wang +4
Experimental demonstrations of 1D van der Waals material tellurium have been presented by Raman spectroscopy under strain and magneto-transport. Raman spectroscopy measurements hav…
Steep-slope Hysteresis-free Negative Capacitance MoS2 Transistors
Mengwei Si, Chun-Jung Su, Chunsheng Jiang +8
The so-called Boltzmann Tyranny defines the fundamental thermionic limit of the subthreshold slope (SS) of a metal-oxide-semiconductor field-effect transistor (MOSFET) at 60 mV/dec…
Field-effect transistors made from solution-grown two-dimensional tellurene
Yixiu Wang, Gang Qiu, Ruoxing Wang +9
The reliable production of two-dimensional crystals is essential for the development of new technologies based on 2D materials. However, current synthesis methods suffer from a var…
\b{eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect
Hong Zhou, Kerry Maize, Gang Qiu +2
We have demonstrated that depletion/enhancement-mode b-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0 A/mm by utilizing a hi…