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Thermoelectric Performance of 2D Tellurium with Accumulation Contacts
Gang Qiu, Shouyuan Huang, Mauricio Segovia +5
Tellurium (Te) is an intrinsically p-type doped narrow bandgap semiconductor with excellent electrical conductivity and low thermal conductivity. Bulk trigonal Te has been theoreti…
A Ferroelectric Semiconductor Field-Effect Transistor
Mengwei Si, Atanu K. Saha, Shengjie Gao +9
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the dev…
Imaging Carrier Inhomogeneities in Ambipolar Tellurene Field Effect Transistors
Samuel Berweger, Gang Qiu, Yixiu Wang +7
Developing van der Waals (vdW) homojunction devices requires materials with narrow bandgaps and simultaneously high hole and electron mobilities for bipolar transport, as well as m…
Quantum Transport and Band Structure Evolution under High Magnetic Field in Few-Layer Tellurene
Gang Qiu, Yixiu Wang, Yifan Nie +4
Quantum Hall effect (QHE) is a macroscopic manifestation of quantized states which only occurs in confined two-dimensional electron gas (2DEG) systems. Experimentally, QHE is hoste…