645 citations · 938 across the 10 of their papers we have counts for
10 papers
Head-to-Head and Tail-to-Tail Domain Wall in Hafnium Zirconium Oxide: A First Principles Analysis of Domain Wall Formation and Energetics
Tanmoy K. Paul, Atanu K. Saha, Sumeet K. Gupta
180° domains walls (DWs) of Head-to-Head/Tail-to-Tail (H-H/T-T) type in ferroelectric (FE) materials are of immense interest for a comprehensive understanding of the FE attributes…
Phase-field Simulations of Polarization Variations in Polycrystalline Hf0.5Zr0.5O2 based MFIM: Voltage-Dependence and Dynamics
Revanth Koduru, Imtiaz Ahmed, Atanu K Saha +3
In this work, we investigate the device-to-device variations in remanent polarization of Hafnium-Zirconium-Oxide based Metal-Ferroelectric-Insulator-Metal (MFIM) stacks. We conside…
Direction-Dependent Lateral Domain Walls in Ferroelectric Hafnium Zirconium Oxide and their Gradient Energy Coefficients: A First Principles Study
Tanmoy K. Paul, Atanu K. Saha, Sumeet K. Gupta
To understand and harness the physical mechanisms of ferroelectric Hafnium Zirconium Oxide (HZO)-based devices, there is a need for clear understanding of domain interactions, thei…
ADRA: Extending Digital Computing-in-Memory with Asymmetric Dual-Row-Activation
Akul Malhotra, Atanu K. Saha, Chunguang Wang +1
Computing in-memory (CiM) has emerged as an attractive technique to mitigate the von-Neumann bottleneck. Current digital CiM approaches for in-memory operands are based on multi-wo…
Multi-domain Polarization Switching in Hf0.5Zr0.5O2-Dielectric Stack: The Role of Dielectric Thickness
Atanu K. Saha, Mengwei Si, Peide D. Ye +1
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE)…
-InSe based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories
Atanu K. Saha, Mengwei Si, Peide Ye +1
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D -InSe based ferroelectric-semicondu…