100 citations · 100 across the 3 of their papers we have counts for
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Multi-domain Polarization Switching in Hf0.5Zr0.5O2-Dielectric Stack: The Role of Dielectric Thickness
Atanu K. Saha, Mengwei Si, Peide D. Ye +1
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE)…
-InSe based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories
Atanu K. Saha, Mengwei Si, Peide Ye +1
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D -InSe based ferroelectric-semicondu…
Multi-Domain Negative Capacitance Effects in Metal-Ferroelectric-Insulator-Semiconductor (Metal) Stacks: A Phase-field Simulation Based Study
Atanu K Saha, Sumeet K Gupta
In this work, we analyze the ferroelectric (FE) domain-wall (DW) induced negative capacitance (NC) effect in Metal-FE-Insulator-Metal (MFIM) and Metal-FE-Insulator-Semiconductor (M…
Phase Field Modeling of Domain Dynamics and Polarization Accumulation in Ferroelectric HZO
Atanu K Saha, Kai Ni, Sourav Dutta +2
In this work, we investigate the accumulative polarization (P) switching characteristics of ferroelectric (FE) thin films under the influence of sequential electric-field pulses. B…
A Ferroelectric Semiconductor Field-Effect Transistor
Mengwei Si, Atanu K. Saha, Shengjie Gao +9
Ferroelectric field-effect transistors employ a ferroelectric material as a gate insulator, the polarization state of which can be detected using the channel conductance of the dev…