645 citations · 4.1k across the 27 of their papers we have counts for
28 papers
A Gate-All-Around Single-Channel In2O3 Nanoribbon FET with Near 20 mA/μm Drain Current
Zhuocheng Zhang, Zehao Lin, Pai-Ying Liao +12
In this work, we demonstrate atomic-layer-deposited (ALD) single-channel indium oxide (In2O3) gate-all-around (GAA) nanoribbon FETs in a back-end-of-line (BEOL) compatible process.…
A Nanometer-Thick Oxide Semiconductor Transistor with Ultra-High Drain Current
Zehao Lin, Mengwei Si, Vahid Askarpour +12
High drive current is a critical performance parameter in semiconductor devices for high-speed, low-power logic applications or high-efficiency, high-power, high-speed radio freque…
Scaled indium oxide transistors fabricated using atomic layer deposition
Mengwei Si, Zehao Lin, Zhizhong Chen +3
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scalin…
Ionic control over ferroelectricity in 2D layered van der Waals capacitors
Sabine M. Neumayer, Mengwei Si, Junkang Li +7
The van der Waals layered material CuInP2S6 features interesting functional behavior, including the existence of four uniaxial polarization states, polarization reversal against th…
Bilayer Quantum Hall States in an n-type Wide Tellurium Quantum Well
Chang Niu, Gang Qiu, Yixiu Wang +3
Tellurium (Te) is a narrow bandgap semiconductor with a unique chiral crystal structure. The topological nature of electrons in the Te conduction band can be studied by realizing n…
The Critical Role of Charge Balance on the Memory Characteristics of Ferroelectric Field-Effect Transistors
Mengwei Si, Peide D. Ye
Ferroelectric field-effect transistors (Fe-FETs) with ferroelectric hafnium oxide (FE HfO2) as gate insulator are being extensively explored as a promising device candidate for thr…