304 citations · 926 across the 8 of their papers we have counts for
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Scaled indium oxide transistors fabricated using atomic layer deposition
Mengwei Si, Zehao Lin, Zhizhong Chen +3
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scalin…
Why In2O3 Can Make 0.7 nm Atomic Layer Thin Transistors?
Mengwei Si, Yaoqiao Hu, Zehao Lin +7
In this work, we demonstrate enhancement-mode field-effect transistors by atomic-layer-deposited (ALD) amorphous In2O3 channel with thickness down to 0.7 nm. Thickness is found to…
Scaled Atomic-Layer-Deposited Indium Oxide Nanometer Transistors with Maximum Drain Current Exceeding 2 A/mm at Drain Voltage of 0.7 V
Mengwei Si, Zehao Lin, Adam Charnas +1
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm,…
Room Temperature Electrocaloric Effect in Layered Ferroelectric CuInP2S6 for Solid State Refrigeration
Mengwei Si, Atanu K. Saha, Pai-Ying Liao +10
A material with reversible temperature change capability under an external electric field, known as the electrocaloric effect (ECE), has long been considered as a promising solid-s…
-GaO Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications
Mengwei Si, Lingming Yang, Hong Zhou +1
Steep-slope -GaO nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric sta…