304 citations · 926 across the 8 of their papers we have counts for
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Multi-domain Polarization Switching in Hf0.5Zr0.5O2-Dielectric Stack: The Role of Dielectric Thickness
Atanu K. Saha, Mengwei Si, Peide D. Ye +1
We investigate the polarization switching mechanism in ferroelectric-dielectric (FE-DE) stacks and its dependence on the dielectric thickness (TDE). We fabricate HZO-Al2O3 (FE-DE)…
Indium-Tin-Oxide Transistors with One Nanometer Thick Channel and Ferroelectric Gating
Mengwei Si, Joseph Andler, Xiao Lyu +4
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-curre…
-InSe based Ferroelectric-Semiconductor Metal Junction for Non-Volatile Memories
Atanu K. Saha, Mengwei Si, Peide Ye +1
In this work, we theoretically and experimentally investigate the working principle and non-volatile memory (NVM) functionality of 2D -InSe based ferroelectric-semicondu…
A tunable ferroelectric based unreleased RF resonator
Yanbo He, Bichoy Bahr, Mengwei Si +2
This paper introduces the first tunable ferroelectric capacitor (FeCAP) based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130nm Ferroelectric RAM (FeR…
A Critical Review of Recent Progress on Negative Capacitance Field-Effect Transistors
Muhammad A. Alam, Mengwei Si, Peide D. Ye
The elegant simplicity of the device concept and the urgent need for a new "transistor" at the twilight of Moore's law have inspired many researchers in industry and academia to ex…
On the Ferroelectric Polarization Switching of Hafnium Zirconium Oxide in Ferroelectric/Dielectric Stack
Mengwei Si, Xiao Lyu, Peide D. Ye
The ferroelectric polarization switching in ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2, HZO) in the HZO/Al2O3 ferroelectric/dielectric stack is investigated systematically…