$β$-Ga$_2$O$_3$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

Mengwei Si; Lingming Yang; Hong Zhou; Peide D. Ye

doi:10.1021/acsomega.7b01289

paper

$β$ -Ga $_{2}$ O $_{3}$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

arXiv:1711.00824 · doi:10.1021/acsomega.7b01289

Abstract

Steep-slope $β$ -Ga $_{2}$ O $_{3}$ nano-membrane negative capacitance field-effect transistors (NC-FETs) are demonstrated with ferroelectric hafnium zirconium oxide in gate dielectric stack. Subthreshold slope less than 60 mV/dec at room temperature is obtained for both forward and reverse gate voltage sweeps with a minimum value of 34.3 mV/dec at reverse gate voltage sweep and 53.1 mV/dec at forward gate voltage sweep at $V_{D S}$ =0.5 V. Enhancement-mode operation with threshold voltage ~0.4 V is achieved by tuning the thickness of $β$ -Ga $_{2}$ O $_{3}$ membrane. Low hysteresis of less than 0.1 V is obtained. The steep-slope, low hysteresis and enhancement-mode $β$ -Ga $_{2}$ O $_{3}$ NC-FETs are promising as nFET candidate for future wide bandgap CMOS logic applications.

21 pages, 5 figures

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β-Ga2​O3​ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications

Abstract

Cited by in corpus (1)

$β$ -Ga $_{2}$ O $_{3}$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications