High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

Abstract

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smaller dimensions. On the opposite end of transistor applications is power electronics for which transistors capable of switching very high voltages are necessary. Miniaturization of energy-efficient power switches can enable the integration with various electronic systems and lead to substantial boosts in energy efficiency. Nanotechnology is yet to have an impact in this arena. In this work, it is demonstrated that nanomembranes of the wide-bandgap semiconductor gallium oxide can be used as channels of transistors capable of switching high voltages, and at the same time can be integrated on any platform. The findings mark a step towards using lessons learnt in nanomaterials and nanotechnology to address a challenge that yet remains untouched by the field.

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Cited by in corpus (18)

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• Intrinsic Electron Mobility Limits in beta-Ga2O3
• Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor
• High Responsivity in Molecular Beam Epitaxy (MBE) grown \b{eta}-Ga2O3 Metal Semiconductor Metal (MSM) Solar Blind Deep-UV Photodetector
• Anisotropy, phonon modes, and free charge carrier parameters in monoclinic $\beta$-gallium oxide single crystals
• \b{eta}-Ga2O3 on Insulator Field-effect Transistors with Drain Currents Exceeding 1.5 A/mm and Their Self-heating Effect
• Delta-doped Beta- Gallium Oxide Field Effect Transistor
• First-Principles Calculations of the Near-Edge Optical Properties of \b{eta}-Ga2O3
• Vibrational and electron-phonon coupling properties of \b{eta}-Ga2O3 from first-principles calculations: Impact on the mobility and breakdown field
• $\beta$-Ga${}_2$O${}_3$ Nano-membrane Negative Capacitance Field-effect Transistor with Steep Subthreshold Slope for Wide Bandgap Logic Applications
• Delta-doped \b{eta}-Ga2O3 thin films and \b{eta}-(Al0.26Ga0.74)2O3/\b{eta}-Ga2O3 heterostructures grown by metalorganic vapor-phase epitaxy
• $\gamma$-phase Inclusions as Common Defects in Alloyed $\beta$-(Al${}_x$Ga${}_{1\text{-}x}$)${}_2$O${}_3$ and Doped $\beta$-Ga${}_2$O${}_3$ Films
• Alloyed B-(AlxGa1-x)2O3 bulk Czochralski single B-(Al0.1Ga0.9)2O3 and polycrystals B-(Al0.33Ga0.66)2O3, B-(Al0.5Ga0.5)2O3), and property trends
• Young's Modulus and Corresponding Orientation in β-Ga2O3 Thin Films Resolved by Nanomechanical Resonators
• Dissimilar thermal transport properties in $\kappa$-Ga${}_2$O${}_3$ and $\beta$-Ga${}_2$O${}_3$ revealed by machine-learning homogeneous nonequilibrium molecular dynamics simulations
• Measurements and Numerical Calculations of Thermal Conductivity to Evaluate the Quality of β-Gallium Oxide Thin Films Grown on Sapphire and Silicon Carbide by Molecular Beam Epitaxy
• Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study
• β-Ga2O3 NEMS Oscillator for Real-Time Middle Ultraviolet (MUV) Light Detection