activity
20112022
most citedHigh-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

344 citations · 701 across the 23 of their papers we have counts for

collaborators

23 papers

cond-mat.mtrl-sci2022

First and Second Order Raman Spectroscopy of Monoclinic

Benjamin M. Janzen, Roland Gillen, Zbigniew Galazka +2

We employ a combined experimental-theoretical study of the first- and second-order Raman modes of monoclinic -GaO. The investigated materials is of particular intere…

nucl-ex2021★ 6 cited

Development of cryogenic calorimeters to measure the spectral shape of In-115 beta decay

E. Celi, Z. Galazka, M. Laubenstein +4

The spectral shape of forbidden beta-decays is a crucial benchmark for nuclear physics calculations and has important implications also for astroparticle physics experiments. Among…

cond-mat.mtrl-sci2021★ 23 cited

A consistent picture of excitations in cubic BaSnO revealed by combining theory and experiment

Wahib Aggoune, Alberto Eljarrat, Dmitrii Nabok +6

Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at ro…

cond-mat.mtrl-sci2021★ 23 cited

Optical phonon modes, static and high frequency dielectric constants, and effective electron mass parameter in cubic InO

Megan Stokey, Rafal Korlacki, Sean Knight +8

A complete set of all optical phonon modes predicted by symmetry for bixbyite structure indium oxide is reported here from a combination of far-infrared and infrared spectroscopic…

cond-mat.mtrl-sci2021★ 8 cited

Fingerprints of optical absorption in the perovskite LaInO: Insight from many-body theory and experiment

Wahib Aggoune, Klaus Irmscher, Dmitrii Nabok +5

We provide a combined theoretical and experimental study of the electronic structure and the optical absorption edge of the orthorhombic perovskite LaInO. Employing density-f…

cond-mat.mtrl-sci2020

The anisotropic quasi-static permittivity of single-crystal beta-Ga2O3

Prashanth Gopalan, Sean Knight, Ashish Chanana +11

The quasi-static anisotropic permittivity parameters of electrically insulating gallium oxide (beta-Ga2O3) were determined by terahertz spectroscopy. Polarization-resolved frequenc…

cond-mat.mtrl-sci2020★ 44 cited

Offcut-related step-flow and growth rate enhancement during (100) -Ga2O3 homoepitaxy by metal-exchange catalyzed molecular beam epitaxy (MEXCAT-MBE)

Piero Mazzolini, Andreas Falkenstein, Zbigniew Galazka +2

In this work we investigate the growth of -Ga2O3 homoepitaxial layers on top of (100) oriented substrates via indium-assisted metal exchange catalyzed molecular beam epitaxy (ME…

cond-mat.mtrl-sci2020★ 15 cited

Thermal conductivity of bulk InO single crystals

Liangcai Xu, Benoit Fauqué, Zengwei Zhu +3

The transparent semiconductor InO is a technologically important material. It combines optical transparency in the visible frequency range and sizeable electric conduct…

cond-mat.mtrl-sci2020★ 17 cited

Enhancement in Thermally Generated Spin Voltage at Pd/NiFeO Interfaces by the Growth on Lattice-Matched Substrates

A. Rastogi, Z. Li, A. V. Singh +15

Efficient spin injection from epitaxial ferrimagnetic NiFeO thin films into a Pd layer is demonstrated via spin Seebeck effect measurements in the longitudinal geometry. Th…

cond-mat.mtrl-sci2020★ 20 cited

Charge carrier density, mobility and Seebeck coefficient of melt-grown bulk ZnGa2O4 single crystals

Johannes Boy, Martin Handwerg, Rüdiger Mitdank +2

The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The elec…

cond-mat.mtrl-sci2019★ 7 cited

Signatures of free carriers in Raman spectra of cubic InO

Manfred Ramsteiner, Johannes Feldl, Zbigniew Galazka

We discuss the influence of free carriers on the Raman scattering in -type InO. For high-quality cubic single crystals, electronic single-particle excitations are reveal…

cond-mat.mes-hall2019★ 15 cited

Vectorial observation of the spin Seebeck effect in epitaxial NiFeO thin films with various magnetic anisotropy contributions

Zhong Li, Jan Krieft, Amit Vikram Singh +7

We have developed a vectorial type of measurement for the spin Seebeck effect (SSE) in epitaxial NiFeO thin films which have been grown by pulsed laser deposition on MgGa$_…

cond-mat.mtrl-sci2018

Temperature dependence of the Seebeck coefficient of epitaxial -GaO thin films

Johannes Boy, Martin Handwerg, Robin Ahrling +4

The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase (MOVPE) grown, silicon doped -GaO thin films was measured relative to al…

cond-mat.mes-hall2018★ 19 cited

Current direction anisotropy of the spin Hall magnetoresistance in nickel ferrite thin films with bulk-like magnetic properties

Matthias Althammer, Amit Vikam Singh, Tobias Wimmer +5

We utilize spin Hall magnetoresistance (SMR) measurements to experimentally investigate the pure spin current transport and magnetic properties of nickel ferrite (NiFe2O4,NFO)/norm…

cond-mat.mtrl-sci2018

Transport Properties and Finite Size Effects in -GaO Thin Films

Robin Ahrling, Johannes Boy, Martin Handwerg +5

Thin films of the wide band gap semiconductor -GaO have a high potential for applications in transparent electronics and high power devices. However, the role of interfa…

cond-mat.mes-hall2018★ 36 cited

Enhanced magnon spin transport in NiFeO thin films on a lattice-matched substrate

J. Shan, A. V. Singh, L. Liang +4

We investigate magnon spin transport in epitaxial nickel ferrite (NiFeO, NFO) films grown on magnesium gallate spinel (MgGaO, MGO) substrates, which have a lattice…

physics.app-ph2018★ 19 cited

The electrical conductivity tensor of -Ga2O3 analyzed by van der Pauw measurements: Inherent anisotropy, off-diagonal element, and the impact of grain boundaries

Christian Golz, Vanesa Hortelano, Fariba Hatami +3

The semiconducting oxide -Gallium Oxide (-GaO) possesses a monoclinic unit cell whose low symmetry generally leads to anisotropic physical properties. For example…

cond-mat.mtrl-sci2016★ 39 cited

Atomic signatures of local environment from core-level spectroscopy in -GaO

Caterina Cocchi, Hannes Zschiesche, Dmitrii Nabok +6

We present a joint theoretical and experimental study on core-level excitations from the oxygen edge of -GaO. A detailed analysis of the electronic structure reveals…

cond-mat.mtrl-sci2015★ 16 cited

Comparative study of the electronic structures of the In and Sn/In2O3 (111) interfaces

M. Nazarzahdemoafi, F. Titze, S. Machulik +4

The electronic structure of the transparent semiconductor In2O3 has been studied by angle resolved photoemission spectroscopy upon deposition of metallic indium and also tin on the…

cond-mat.mtrl-sci2015★ 26 cited

On the influence of inversion on thermal properties of magnesium gallium spinel

Linda Schwarz, Zbigniew Galazka, Thorsten M. Gesing +1

Measurements of thermal diffusivity \k{appa} (using laser flash analysis) for temperatures from 100 °C to 1200 °C and of the inversion parameter x (using X-ray analysis) for the si…

cond-mat.mtrl-sci2013★ 19 cited

Top-seeded solution growth of SrTiO3 crystals and phase diagram studies in the SrO-TiO2 system

Christo Guguschev, Detlef Klimm, Frank Langhans +4

The TiO2 rich part of the (1-x) SrO + x TiO2 phase diagram 0.5 <= x <= 1.0 was redetermined and the eutectic point between SrTiO3 and TiO2 was found at x_eut=0.7700+/-0.0001; T_eut…

cond-mat.mes-hall2013★ 344 cited

High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes

Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11

Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smal…

cond-mat.mtrl-sci2011★ 5 cited

Growth Techniques for Bulk ZnO and Related Compounds

Detlef Klimm, Detlev Schulz, Steffen Ganschow +2

ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is per…